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I8N25 - 8A 250V N-channel Enhancement Mode Power MOSFET

General Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Which accords with the RoHS standard.

Key Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤0.47Ω).
  • Low Gate Charge(Typical Data:12nC).
  • Low Reverse Transfer Capacitances(Typical:7pF).
  • 100% Single Pulse Avalanche Energy Test.
  • 100% ΔVDS Test TO-220C TO-220F TO-262 3.

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Datasheet Details

Part number I8N25
Manufacturer ROUM
File Size 1.42 MB
Description 8A 250V N-channel Enhancement Mode Power MOSFET
Datasheet download datasheet I8N25 Datasheet

Full PDF Text Transcription for I8N25 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for I8N25. For precise diagrams, and layout, please refer to the original PDF.

8N25/F8N25/I8N25/ E8N25/B8N25/D8N25 8A 250V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned plan...

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ese N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 250V RDS(on) （TYP)= 0.4Ω ID = 8A 2 Features ● Fast Switching ● Low ON Resistance(Rdson≤0.47Ω) ● Low Gate Charge(Typical Data:12nC) ● Low Reverse Transfer Capacitances(Typical:7pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test TO-220C TO-220F TO-262 3 Applications ● Used in various power switching circuit for system miniaturization and higher efficiency.

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