I8NE60 - 7.5A 600V N-channel Enhancement Mode Power MOSFET

General Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Which accords with the RoHS standard.

Key Features

Fast Switching.
ESD Improved Capability.
Low ON Resistance(Rdson≤1.3Ω).
Low Gate Charge(Typical Data:24nC).
Low Reverse Transfer Capacitances(Typical:5.5pF).
100% Single Pulse Avalanche Energy Test.
100% ΔVDS Test 3.

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I8NE60 7.5a 600v n-channel enhancement mode power mosfet by ROUM - Datasheet Preview

Datasheet Details

Part number	I8NE60
Manufacturer	ROUM
File Size	1.34 MB
Description	7.5A 600V N-channel Enhancement Mode Power MOSFET
Datasheet	I8NE60 Datasheet

Full PDF Text Transcription for I8NE60 (Reference)

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8NE60/F8NE60/I8NE60/E8NE60/B8NE60/D8NE60 7.5A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-align...

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tion These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 600V RDS(on) （TYP)= 1.0Ω ID = 7.5A 2 Features ● Fast Switching ● ESD Improved Capability ● Low ON Resistance(Rdson≤1.3Ω) ● Low Gate Charge(Typical Data:24nC) ● Low Reverse Transfer Capacitances(Typical:5.5pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● Used in various power switching circuit for system miniaturization and higher efficiency. ● Power switch circui

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