Rectron Semiconductor 1SS226
SWITCHING DIODE
FEATURES
z Low forward voltage z Fast reverse recovery time z Small total capacitance MARKING: C3 C3 C3 SOT-23 1 3 2 Solid dot = Green molding compound device,if none,the normal device.MAXIMUM RATINGS
,Single Diode @Ta=25Я Parameter Non-Repetitive Peak Reverse Voltage Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VRM VRRM VRWM VR IFM IO IFSM PD RșJA TJ TSTG Limit 85 80 300 100 2 150 833 150 -55~+150ELECTRICAL CHARACTERISTICS
(Ta=25Я unless otherwise specified) Parameter Symbol Test conditions Min Reverse breakdown voltage V(BR) IR= 100uA 80 Reverse voltage leakage current IR VR=80V Forward voltage VF IF=100mA Diode capacitance Reverse recovery time CD VR=0V, f=1MHz t rr IF=10mA Unit V V mA mA A mW Я/W Я Я Max Unit V 0.5 uA 1.2...