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1SS226
SILICON EPITAXIAL PLANAR DIODE
Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance
Applications • Ultra high speed switching application
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Maximum Peak Reverse Voltage Reverse Voltage Average Forward Current Maximum Peak Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
Forward Voltage at IF = 100 mA Reverse Current at VR = 80 V Total Capacitance at VR = 0 , f = 1 MHz Reverse Recovery Time at IF = 10 mA
3
12
Marking Code: A7 SOT-23 Plastic Package
Symbol
VRM VR IO IFM IFSM Ptot Tj Ts
Value 85 80 100 300 2 150 150
- 55 to + 150
Unit V V mA mA A
mW OC OC
Symbol VF IR CT trr
Max. 1.2 0.
1SS226 Datasheet
