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BCW60C Datasheet PDF

Rectron Semiconductor BCW60C

NPN Transistor

Part No. BCW60C
Datasheet BCW60C Download
Manufacturer
Rectron Semiconductor
Description NPN Transistor
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BCW60C datasheet page 1 preview

FEATURES

* Power dissipation PCM : 0.25 W (Tamb=25OC) * Collector current ICM : 0.1 A * Collector-base voltage V(BR)CBO : 32 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC

MECHANICAL DATA

* Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25OC ambient temperature unless otherwise specified. Single phase , half wave, 60HZ, resistive or inductive load. For capacitive load, derate current by 20%.

ELECTRICAL CHARACTERISTICS

( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Collector-base breakdown voltage (IC= 10mA, IE=0) SYMBOL V(BR)CBO Collector-emitter breakdown voltage (IC= 1mA, IB=0) Emitter-base breakdown voltage (IE= 10mA, IC=0) Collector cut-off current (VCB= 32V, IE=0) V(BR)
BCW60C page 2 preview