Datasheet4U Logo Datasheet4U.com

BCW60C - GENERAL PURPOSE TRANSISTOR

Download the BCW60C datasheet PDF. This datasheet also covers the BCW60A variant, as both devices belong to the same general purpose transistor family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BCW60A-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BCW60C NPN EPITAXIAL SILICON TRANSISTOR Samsung semiconductor
BCW60C NPN general purpose transistors NXP
BCW60C NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) Siemens Semiconductor Group
BCW60C NPN Silicon AF Transistors Infineon Technologies AG
BCW60C NPN Transistor RECTRON

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
BCW60A GENERAL PURPOSE TRANSISTOR
BCW60B GENERAL PURPOSE TRANSISTOR
BCW60D GENERAL PURPOSE TRANSISTOR
BCW61A GENERAL PURPOSE TRANSISTOR
BCW61B GENERAL PURPOSE TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BCW60A,B,C,D MAXIMUM RATINGS CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR NPN SILICON Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous THERMAL CHARACTERISTICS Symbol vCEO VCBO vEBO 'C Characteristic 'Total Device Dissipation, TA = 25°C Derate above 25°C Symbol pd Storage Temperature Tstg 'Thermal Resistance Junction to Ambient R 0JA mmJ 'Package mounted on 99.5% alumina 10 x 8 x 0.6 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage flC = 2.0 mAdc, lg = 0) Emitter-Base Breakdown Voltage (IE = 1.0 f(Adc, lc = 0) Collector Cutoff Current (VCE = 32 Vdc) (VCE = 32 Vdc, TA = 150°C) Emitter Cutoff Current (VEB = 4.