BCW60C Datasheet PDF

MAXIMUM RATINGS

CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR NPN SILICON Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous THERMAL CHARACTERISTICS Symbol vCEO VCBO vEBO 'C Characteristic 'Total Device Dissipation, TA = 25°C Derate above 25°C Symbol pd Storage Temperature Tstg 'Thermal Resistance Junction to Ambient R 0JA mmJ 'Package mounted on 99.5% alumina 10 x 8 x 0.6

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage flC = 2.0 mAdc, lg = 0) Emitter-Base Breakdown Voltage (IE = 1.0 f(Adc, lc = 0) Collector Cutoff Current (VCE = 32 Vdc) (VCE = 32 Vdc, TA = 150°C) Emitter Cutoff Current (VEB = 4.0 Vdc, lc = 0) ON CHARACTERISTICS DC Current Gain dc = 10 ,uAdc, Vqe = 5.0 Vdc) BCW60A BCW60B BCW60C BCW60D OC = 2.0 mAdc, Vqe = 5.0 Vdc) BCW60A BCW60B BCW60C BCW60D dC = 50 mAdc, Vce = 1.0