BCW60C
Key Features
- Power dissipation PCM :
- 25 W (Tamb=25OC)
- Collector current ICM :
- Collector-base voltage V(BR)CBO : 32 V
- Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC
- Part: BCW60C
- Description: NPN Transistor
- Category: Transistor
- Manufacturer: Rectron
- Size: 286.40 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| BCW60C | Siemens Semiconductor Group | NPN Silicon AF Transistors |
| BCW60C | Vishay | Small Signal Transistors |
| BCW60C | Diotec Semiconductor | Surface Mount General Purpose Si-Epi-Planar Transistors |
| BCW60C | Galaxy Microelectronics | NPN General Purpose Amplifier |
| BCW60C | Samsung Semiconductor | NPN EPITAXIAL SILICON TRANSISTOR |
| BCW60C | WEJ | NPN TRANSISTOR |
| BCW60 | Siemens Semiconductor Group | NPN Silicon AF Transistors |
| BCW60A | Samsung Semiconductor | NPN EPITAXIAL SILICON TRANSISTOR |
| BCW60A | Siemens Semiconductor Group | NPN Silicon AF Transistors |
| BCW60FF | Siemens Semiconductor Group | NPN Silicon AF Transistors |