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BCW66F - NPN Transistor

General Description

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"Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time.

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Key Features

  • Power dissipation PCM : 0.2 W (Tamb=25OC).
  • Collector current ICM : 0.8 A.
  • Collector-base voltage V(BR)CBO : 75 V.
  • Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC.

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Datasheet Details

Part number BCW66F
Manufacturer RECTRON
File Size 287.02 KB
Description NPN Transistor
Datasheet download datasheet BCW66F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) BCW66F FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.8 A * Collector-base voltage V(BR)CBO : 75 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25OC ambient temperature unless otherwise specified. Single phase , half wave, 60HZ, resistive or inductive load. For capacitive load, derate current by 20%.