BCW66F
Overview
- Power dissipation PCM :
- 2 W (Tamb=25OC)
- Collector current ICM :
- Collector-base voltage V(BR)CBO : 75 V
- Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC
| Part | BCW66F |
|---|---|
| Description | NPN Transistor |
| Category | Transistor |
| Manufacturer | Rectron |
| Size | 287.02 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| BCW66 | Multicomp | NPN General Purpose Amplifier |
| BCW60B | Samsung Semiconductor | NPN EPITAXIAL SILICON TRANSISTOR |
| BCW61B | Siemens Semiconductor Group | PNP Transistor |
| BCW60D | Continental Device India | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW68F | SeCoS Halbleitertechnologie GmbH | PNP Transistor |