WEJ BCW60C
NPN TRANSISTOR
RoHS BCW60C SOT-23 Plastic-Encapsulate Transistors BCW60C DFEATURES TRANSISTOR (NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR TPower dissipation 1. 0 .,LPCM: 0.25 W (Tamb=25℃) Collector current ICM: 0.1 A OCollector-base voltage 0. 4 0. 95 1. 9 2. 9 V(BR)CBO: 32 V COperating and storage junction temperature range 0. 95 TJ, Tstg: -55℃ to +150℃ 2. 4 1. 3 Unit: mm ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) NParameter Collector-base breakdown voltage OCollector-emitter breakdown voltage REmitter-base breakdown voltage TCollector cut-off current Collector cut-off current ECDC current gain ELCollector-emitter saturation voltage JBase-emitter saturation voltage EBase-emitter voltage WTransition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) VBE fT Test conditions Ic= 10µA, IE=0 Ic= 1mA, IB=0 IE=10µA, IC=0 VCB=32V, IE=0 VEB=4V, IC=0 VCE=5V, IC= 10µA VCE=5V, IC= 2mA VCE=5V, IC= 50mA IC=10mA, IB=0.25mA IC=50mA, IB=1.25mA IC=10mA, IB=0...