Rectron Semiconductor FZT493
100V NPN MEDIUM POWER TRANSISTOR
| Part No. | FZT493 |
|---|---|
| Datasheet | FZT493 Download |
| Manufacturer |  Rectron Semiconductor |
| Description | 100V NPN MEDIUM POWER TRANSISTOR |
| Buy | Stock & Price |
FEATURES
1. BVCEO > 100V 2. IC=1A High Continuous Current 3. Low saturation voltage 1˖Base 2˖Collector 3˖Emitter Maximum ratings(Ta=25ć unless otherwise noted) Parameter Symbol Value Unit Collector-Base Breakdown Voltage VCBO 120 V Collector-Emitter Breakdown Voltage VCEO 100 V Emitter-Base Breakdown Voltage VEBO 5 V Collector Current IC 1 A Collector Power Dissipation PC 2 W Junction Temperature TJ 150 ć Storage Temperature Tstg -55~150 ćELECTRICAL CHARACTERISTICS
(Ta=25ć unless otherwise noted) Parameter Symbol Test Condition Min Max Unit Collector-Base Breakdown Voltage VCBO IC=100uA IE=0 120 V Collector-Emitter Breakdown Voltage VCEO IC=1mA IB=0 100 V Emitter-Base Breakdown Voltage VEBO IE=100uA IC=0 5 V Collector-Base Cutoff Current ICBO VCB=100V IE=0 100 nA Emitter-Base Cutoff Current IEBO VEB=4V IC=0 100 nA Collector-Emitter Cutoff Current ICE0 VCE=100V IB=0 4 uA VCE=10V IC=1mA 100 DC Current Gain VCE=10V IC=250mA 100 300 HFE VCE=10V IC=500mA 60 VCE=10V IC=1A 20 IC=500mA IB=50m...
