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RB501V-40 Datasheet PDF

Rectron Semiconductor RB501V-40

Plastic-Encapsulate Schottky Barrier Diode

Part No. RB501V-40
Datasheet RB501V-40 Download
Manufacturer
Rectron Semiconductor
Description Plastic-Encapsulate Schottky Barrier Diode
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RB501V-40 datasheet page 1 preview

FEATURES

High Current Capability Low Forward Voltage Drop SOD-323

MECHANICAL DATA

SOD-323 Small Outline Plastic Package Polarity: Color band denotes cathode end Mounting Position: Any Marking: 4

MAXIMUM RATINGS

& Thermal Characteristics (Ratings at 25ć ambient temperature unless otherwise specified.) Parameters Symbol Limit Unit Peak reverse voltage VRM 45 V DC reverse voltage VR 40 V Mean rectifying current Io 0.1 A Peak forward surge current 8.3 ms single half sine-wave IFSM 1.0 A Typical thermal resistance RθJA 500 ć/W Power Dissipation PD 200 P: Storage temperature range TSTG -40-+125 ć

ELECTRICAL CHARACTERISTICS

(Ratings at 25ć ambient temperature unless otherwise specified). Parameters Maximum forward voltage Maximum reverse current Symbol VF IR Test conditions IF = 100mA IF = 10mA VR=10V Min. Typ. Max. Unit 0.55 0.34 V 30 uA Capacitance between terminals CT VR=10V, f=1MHz 6 pF 2022-05/114 REV: O RATING AND CHARACTERISTICS CURVES ( RB501V-40 ) FORWARD CURRENT I (mA) F )RUZ DUG &K...
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