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RM4N650TI - N-Channel Super Junction Power MOSFET

This page provides the datasheet information for the RM4N650TI, a member of the RM4N650T2 N-Channel Super Junction Power MOSFET family.

Description

technology and design to provide excellent RDS(ON) with low gate charge.

This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

Features

  • ƽNew technology for high voltage device ƽLow on-resistance and low conduction losses ƽSmall package ƽUltra Low Gate Charge cause lower driving requirements ƽ100% Avalanche Tested ƽROHS compliant VDS@Tjmax 650 V RDS(ON) MAX 1200 mΩ ID 4 A.

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Datasheet preview – RM4N650TI

Datasheet Details

Part number RM4N650TI
Manufacturer Rectron
File Size 961.44 KB
Description N-Channel Super Junction Power MOSFET
Datasheet download datasheet RM4N650TI Datasheet
Additional preview pages of the RM4N650TI datasheet.
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Full PDF Text Transcription

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N-Channel Super Junction Power MOSFET Ċ RM4N650T2 RM4N650HD RM4N650TI General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
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