Datasheet Details
| Part number | RM4P30S6 |
|---|---|
| Manufacturer | Rectron |
| File Size | 238.96 KB |
| Description | P-Ch 30V Fast Switching MOSFET |
| Datasheet | RM4P30S6-Rectron.pdf |
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Overview: RM4P30S6 P -Ch 30V Fast Switching MOSFETs.
| Part number | RM4P30S6 |
|---|---|
| Manufacturer | Rectron |
| File Size | 238.96 KB |
| Description | P-Ch 30V Fast Switching MOSFET |
| Datasheet | RM4P30S6-Rectron.pdf |
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The RM4P30S6 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
The RM4P30S6 meet the RoHS and Green Product requirement, with full function reliability approved.
Pin Configuration Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Halogen-free P/N suffix V means AEC-Q101 qualified, e.g:RM4P30S6V Product Summary BVDSS RDS ON ID -30V 52mΩ -3.9A Package Marking And Ordering Information Device Marking Device Device Package 4P30 RM4P30S6 SOT-23-6 Absolute Maximum Ratings Reel Size Ø180mm DS D DG D SOT-23-6 top view Tape width 8 mm Quantity 3000 units Drain-Source Voltage Gate-SouUce Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Total Power Dissipation3 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Thermal Resistance Junction Ambient 1 Thermal Resistance Junction-Ambient 1 (t ≤10s) Thermal Resistance Junction-Case1 VDS VGS ID@TA=25ć ID@TA =70ć IDM PD@TA=25ć PD@TA= 70ć TSTG TJ RθJA RθJA RθJC 10s Steady State -30 V f20 V -4.5 -3.9 A -3.5 -3.1 A -20 A 1.5 1.1 W 0.94 0.73 W -55 to 150 ć -55 to 150 ć 110 ć/W --- 85 ć/W --- 70 ć/W 2022-03/83 REV:A Electrical Characteristics (TJ=25 ഒ, unless otherwise noted) Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Transconductance Total Gate Charge (-4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS RDS(ON) VGS(th) IDSS IGSS gfs Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss ġ
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