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RM50N30DN - N-Channel Super Trench Power MOSFET

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Description

RM50N30DN seriesarefromAdvancedPowerinnovateddesignand silicon process technology to achieve the lowest possible onresistance and fast switching performance.

It provides the designer with an extreme efficient device for use in a wide range of power applications.

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Part number RM50N30DN
Manufacturer Rectron
File Size 817.99 KB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet RM50N30DN Datasheet
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RM50N30DN Description RM50N30DN seriesarefromAdvancedPowerinnovateddesignand silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The DFN 3 x 3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. Simple Drive Requirement Small Size & Lower Profile RoHS Compliant & Halogen-Free BVDSS RDS(ON) ID 30V 4.1mӨ 50A D D D D S S S G DFN 3 x 3 D G S Package Marking and Ordering Information Device Marking Device Device Package 50N30 RM50N30DN DFN 3x3 Reel Size - Tape width - Quantity - Absolute Maximum Ratings@Tj=25o.
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