Datasheet Summary
N-Channel Enhancement Mode Power MOSFET
Description
The RM80N30LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
ƽ VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V
ƽ High density cell design for ultra low Rdson ƽ Fully characterized avalanche voltage and current ƽ Good stability and uniformity with high EAS ƽ Excellent package for good heat dissipation
Application
ƽ Power switching application ƽ Hard switched and high frequency circuits ƽ Uninterruptible power supply
Schematic diagram Marking and pin assignment
100% UIS TESTED!
Package Marking...