2SK3000 Key Features
- Low on-resistance RDS(on) = 0.16 Ω typ. (VGS = 10 V, ID = 450 mA)
- 4 V gate drive devices
- Small package (MPAK)
- Expansive drain to source surge power capability
- Part: 2SK3000
- Description: Silicon N-Channel MOSFET
- Manufacturer: Renesas
- Size: 157.84 KB
Other 2SK3000 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Hitachi Semiconductor |
2SK3000 | Silicon N-Channel MOSFET |
Kexin Semiconductor |
2SK3000 | N-Channel Enhancement MOSFET |