Datasheet4U Logo Datasheet4U.com

BIC801M - VHF/UHF RF Amplifier

Features

  • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space.
  • High gain; PG = 27 dB typ. (at f = 200 MHz), PG = 21.5 dB typ. (at f = 900 MHz).
  • Low noise; NF = 1.1 dB typ. (at f = 200 MHz), NF = 1.75 dB typ. (at f = 900 MHz).
  • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
  • Provide mini mold packages; MPAK-4R(SOT-143mod) Outline Notes: 1. M.

📥 Download Datasheet

Datasheet preview – BIC801M

Datasheet Details

Part number BIC801M
Manufacturer Renesas Electronics
File Size 108.63 KB
Description VHF/UHF RF Amplifier
Datasheet download datasheet BIC801M Datasheet
Additional preview pages of the BIC801M datasheet.

📁 Similar Datasheet

  • BIC1422 - MAIN SWITCH MOSFET AND COMMUTATION MOSFET (ETC)
  • BIC702C - VHF/UHF RF Amplifier (Hitachi Semiconductor)
Other Datasheets by Renesas Technology

Full PDF Text Transcription

Click to expand full text
BIC801M Bias Controlled Monolithic IC VHF/UHF RF Amplifier www.DataSheet4U.com ADE-208-705C (Z) 4th. Edition Nov. 1998 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High gain; PG = 27 dB typ. (at f = 200 MHz), PG = 21.5 dB typ. (at f = 900 MHz) • Low noise; NF = 1.1 dB typ. (at f = 200 MHz), NF = 1.75 dB typ. (at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4R(SOT-143mod) Outline Notes: 1. Marking is “AY–”. 2. BIC801M is individual type number of HITACHI BICMIC.
Published: |