• Part: H7N1002AB
  • Description: Silicon N Channel MOS FET High Speed Power Switching
  • Manufacturer: Renesas
  • Size: 231.02 KB
Download H7N1002AB Datasheet PDF
Renesas
H7N1002AB
Features - Low on-resistance RDS(on) = 8 mΩ typ. - Low drive current - Available for 4.5 V gate drive Outline TO-220AB 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Oct.30.2003, page 1 of 9 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current .. Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 Ratings 100 ±20 75 300 75 50 166 100 150 - 55 to +150 Unit V V A A A A m J W °C °C Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature EARNote3 Pch Tch Tstg Note2 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Rev.2.00, Oct.30.2003, page 2 of 9 Electrical Characteristics (Ta = 25°C) Item Symbol Min 100 Typ - - - - - 8 10 95 9700 740 330 155 35 33 43 245 130 25 0.93 70 Max - - ±10 10 2.5 10 15 - - - - - - - - - - - - - Unit V V µA µA V mΩ mΩ S p F p F p F...