H7N1002AB Overview
H7N1002AB Silicon N Channel MOS FET High Speed Power Switching REJ03G0130-0200Z Rev.2.00 Oct.30.2003.
H7N1002AB Key Features
- Low on-resistance RDS(on) = 8 mΩ typ
- Low drive current
- Available for 4.5 V gate drive
H7N1002AB datasheet by Renesas.
| Part number | H7N1002AB |
|---|---|
| Datasheet | H7N1002AB_RenesasTechnology.pdf |
| File Size | 231.02 KB |
| Manufacturer | Renesas |
| Description | Silicon N Channel MOS FET High Speed Power Switching |
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H7N1002AB Silicon N Channel MOS FET High Speed Power Switching REJ03G0130-0200Z Rev.2.00 Oct.30.2003.
| Part Number | Description |
|---|---|
| H7N1002LD | Silicon N Channel MOS FET High Speed Power Switching |
| H7N1002LM | Silicon N Channel MOS FET High Speed Power Switching |
| H7N1002LS | Silicon N Channel MOS FET High Speed Power Switching |
| H7N1004AB | Silicon N Channel MOS FET High Speed Power Switching |
| H7N1004DL | Silicon N Channel MOS FET High Speed Power Switching |
| H7N1004DS | Silicon N Channel MOS FET High Speed Power Switching |
| H7N1004FM | Silicon N Channel MOS FET High Speed Power Switching |
| H7N1004FN | Silicon N Channel MOS FET High Speed Power Switching |
| H7N1004LD | (H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching |
| H7N1004LM | (H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching |