HAF2027 - Silicon N-Channel Power MOSFET Power Switching

Renesas

General Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

Key Features

Logic level operation (4 V Gate drive) Built-in the over temperature shut-down circuit High endurance capability against to the shut-down circuit Latch type shut down operation (need 0 voltage recovery) Outline.

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HAF2027 silicon n-channel power mosfet power switching by Renesas - Datasheet Preview

Datasheet Details

Part number	HAF2027
Manufacturer	Renesas
File Size	151.99 KB
Description	Silicon N-Channel Power MOSFET Power Switching
Datasheet	HAF2027 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HAF2027(L), HAF2027(S) Silicon N Channel Power MOS FET Power Switching REJ03G1674-0100 Rev.1.00 May 19, 2008 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..