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HAF2027L Datasheet Silicon N-channel Power MOSFET Power Switching

Manufacturer: Renesas

Overview: HAF2027(L), HAF2027(S) Silicon N Channel Power MOS FET Power Switching REJ03G1674-0100 Rev.1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..

Key Features

  • Logic level operation (4 V Gate drive).
  • Built-in the over temperature shut-down circuit.
  • High endurance capability against to the shut-down circuit.
  • Latch type shut down operation (need 0 voltage recovery) Outline.

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