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HAT2126RP Datasheet Silicon N-Channel MOSFET

Manufacturer: Renesas

Overview: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.

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Key Features

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  • Low on-resistance.
  • Capable of 4.5 V gate drive.
  • High density mounting.
  • Built-in Schottky Barrier Diode Outline HSOP-11 10 11 9 8 7 6 5 34 1 2 1 D 7 8 D D 2 G 3 G 4, 5, 6, 9, 10 , 11 2, 3 1, 7, 8 S S S 9 10 11 Source Gate Drain S S S 4 5 6 MOS1 MOS2 and Schottky Barrier Diode HAT2126RP Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings MOS1 Drain to source voltage Gate to source voltage Drain current Drain peak curren.

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