HAT2169N Overview
HAT2169N Silicon N Channel Power MOS FET Power Switching Preliminary Rev.0.01 May.29.2005.
HAT2169N Key Features
- Capable
- High speed switching of 4.5 V gate drive
- Low drive current
- High density mounting
- Low on-resistance RDS(on) = 3.1 mΩ typ. (at VGS = 10 V)