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HAT2169N Datasheet Silicon N-Channel MOSFET

Manufacturer: Renesas

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Overview

HAT2169N Silicon N Channel Power MOS FET Power Switching Preliminary Rev.0.01 May.29.

Key Features

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  • Capable.
  • High speed switching of 4.5 V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance RDS(on) = 3.1 mΩ typ. (at VGS = 10 V) Outline LFPAK-i 5 6 7 8 D D D D 1(S) 2(S) 3(S) 4(G) 4 G 8(D) 7(D) 6(D) 5(D) 2X XX 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode rever.

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