• Part: HAT2189WP
  • Description: Silicon N-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: Renesas
  • Size: 194.38 KB
Download HAT2189WP Datasheet PDF
Renesas
HAT2189WP
HAT2189WP is Silicon N-Channel Power MOSFET manufactured by Renesas.
Features - Low on-resistance - Low drive current - High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 4 32 1 5 678 D DDD REJ03G1251-0200 Rev.2.00 Aug 28, 2009 1, 2, 3 Source Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS Note1 (pulse) Note1 (pulse) IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 200 ±30 8.5 17 8.5 17 8.5 4.8 20 6.25 150 - 55 to +150 (Ta = 25°C) Unit V V A A A A A m J...