Datasheet4U Logo Datasheet4U.com

HAT2265H - Silicon N-Channel Power MOSFET

Key Features

  • High speed switching.
  • Capable of 4.5 V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance RDS(on) = 2.5 mΩ typ. (at VGS = 10 V).
  • Lead Free Outline LFPAK 5 5 D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5 Drain S S S 1 2 3 Rev.0.00, Sept.2004, page 1 of 5 www. DataSheet4U. com HAT2265H Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode.

📥 Download Datasheet

Datasheet Details

Part number HAT2265H
Manufacturer Renesas
File Size 69.30 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HAT2265H Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com HAT2265H Silicon N Channel Power MOS FET Power Switching Rev.0.00 Sept.2004 Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 2.5 mΩ typ. (at VGS = 10 V) • Lead Free Outline LFPAK 5 5 D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5 Drain S S S 1 2 3 Rev.0.00, Sept.2004, page 1 of 5 www.DataSheet4U.