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HAT2299WP
Silicon N Channel Power MOS FET Power Switching
Features
• Low on-resistance • Low drive current • High density mounting
Outline
RENESAS Package code: PWSN0008DA-A (Package name: WPAK)
5 678
5 678 D DDD
4
4 32 1
G
REJ03G1528-0100 Rev.1.00
Mar 20, 2007
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
S SS 1 23
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C 3.
HAT2299WP Datasheet
