HSD226
HSD226 is Silicon Schottky Barrier Diode for High Speed Switching manufactured by Renesas.
Features
- Low reverse current, Low capacitance.
- Super small Flat Package (SFP) is suitable for surface mount design.
Ordering Information
Type No. HSD226 Laser Mark S4 Package Code SFP
Pin Arrangement
Cathode mark Mark 1
S4
2 1. Cathode 2. Anode
Data Sheet 4 U .
..
Absolute Maximum Ratings
(Ta = 25°C)
Item Repetitive peak reverse voltage Non-Repetitive Peak forward surge current Forward current Junction temperature Storage temperature Note: 1. 10 ms Sine Wave 1 pulse Symbol VRRM IFSM
- IF Tj Tstg
Value 25 200 50 125
- 55 to +125
Unit V m A m A °C °C
Electrical Characteristics
(Ta = 25°C)
Item Forward voltage Symbol VF1 VF2 Reverse current Capacitance Note: IR C Min Typ Max 0.33 0.38 0.45 2.80 Unit V V µA p F Test Condition IF = 1 m A IF = 5 m A VR = 20 V VR = 1 V, f = 1 MHz
1. Please do not use the soldering iron due to avoid high stress to the SFP package.
Rev.1, Jul. 2002, page 2 of 5
Data Sheet 4 U .
..
Main Characteristic
101 100 10- 1
Forward current IF (A)
10- 4
10- 2 10- 3 10
- 4
Reverse current IR (A)
10- 5
Ta = 75°C
Ta = 75°C Ta = 25°C
10- 6
Ta = 25°C
10- 5 10- 6 10- 7 10- 8 0 0.2
10-...
