HSD88
HSD88 is Silicon Schottky Barrier Diode manufactured by Renesas.
Features
- Low capacitance. (C = 0.8 p F max)
- Low forward voltage.
- Super small Flat Lead Package (SFP) is suitable for surface mount design.
Ordering Information
Type No. HSD88 Cathode Mark S3 Package Name SFP Package Code (Previous Code) PUSF0002ZB-A (SFP)
Pin Arrangement
Cathode mark Mark .. 1
S3
2 1. Cathode 2. Anode
Rev.1.00 Apr 26, 2005 page 1 of 4
Absolute Maximum Ratings
(Ta = 25°C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature VR IO Tj Tstg Symbol Value 10 15 125
- 55 to +125 Unit V m A °C °C
Electrical Characteristics
(Ta = 25°C)
Item Forward voltage Reverse current Capacitance 1 ESD-Capability
- Symbol VF1 VF2 IR1 IR2 C
- Min 0.350 0.500
- -
- 30 Typ
- -
- -
- - Max 0.420 0.580 0.2 10 0.80
- Unit V µA p F Ω Test Condition IF = 1 m A IF = 10 m A VR = 2 V VR = 10 V VR = 0 V, f = 1 MHz C = 200 p F, Both forward and reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR > 0.4 µA at VR = 2 V 2. Please do not use the soldering iron due to avoid high stress to the SFP package.
Rev.1.00 Apr 26, 2005 page 2 of 4
Main Characteristic
10-2 10-6
Ta= 75°C
(A)
10-3
Reverse current IR (A)
10-7
Ta= 50°C
Forward current IF
10-4
Ta=...
