HSD880 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HSD880, a member of the HSD880_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Product Overview

Hi-Sincerity Mocroelectronics

Part number	HSD880
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	41.55 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HSD880 Datasheet
Additional preview pages of the HSD880 datasheet.

The HSD880 is designed for low frequency power amplifier applications.

High DC Current Gain.
High Power Dissipation: PC=30W at TC=25°C TO-220 Absolute Maximum Ratings (TA=25°C).
Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TC=25°C) 30 W Total Power Dissipation (TA=25°C).

Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Mar 26, 2005 |