Datasheet Details
| Part number | HSD879D |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 41.46 KB |
| Description | SILICON NPN EPITAXIAL TYPE TRANSISTOR |
| Datasheet |
 HSD879D Datasheet
|
|
|
General Description
For 1.5V and 3v electronic flash use.
Key Features
- Charger-up time is about 1 ms faster than of a germanium transistor.
- Small saturation voltage can bring less power dissipation and flashing times. TO-126ML Absolute Maximum Ratings.
- Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
- Maximum Power Dissipation Total Power Dissipation (TA=25°C) 1.4 W.
- Maximum Voltages and Currents (TA=25°C) BVCBO Co.