• Part: HSD1159
  • Description: NPN EPITAXIAL PLANAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: Hi-Sincerity Mocroelectronics
  • Size: 34.50 KB
Download HSD1159 Datasheet PDF
Hi-Sincerity Mocroelectronics
HSD1159
HSD1159 is NPN EPITAXIAL PLANAR TRANSISTOR manufactured by Hi-Sincerity Mocroelectronics.
- Part of the HSD1159_Hi comparator family.
Description Capable of efficient drive with small internal loss due to excellent tf. Spec. No. : HE6706-B Issued Date : 1993.01.13 Revised Date : 1999.08.01 Page No. : 1/3 Absolute Maximum Ratings (Ta=25°C) - Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum - Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 40 W - Maximum Voltages and Currents BVCBO Collector to Base Voltage 200 V BVCEO Collector to Emitter Voltage 60 V...