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HSD1159 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HSD1159 datasheet PDF. This datasheet also covers the HSD1159_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Capable of efficient drive with small internal loss due to excellent tf.

Spec.

No.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HSD1159_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HSD1159
Manufacturer Hi-Sincerity Mocroelectronics
File Size 34.50 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HSD1159 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HSD1159 NPN EPITAXIAL PLANAR TRANSISTOR Description Capable of efficient drive with small internal loss due to excellent tf. Spec. No. : HE6706-B Issued Date : 1993.01.13 Revised Date : 1999.08.01 Page No. : 1/3 Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) .................................................................................... 40 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage ............................