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HSD1159 - NPN EPITAXIAL PLANAR TRANSISTOR

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Part number HSD1159
Manufacturer Hi-Sincerity Mocroelectronics
File Size 34.50 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HSD1159 Datasheet
Note This datasheet PDF includes multiple part numbers: HSD1159, HSD1159_Hi.
Please refer to the document for exact specifications by model.
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Capable of efficient drive with small internal loss due to excellent tf. Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 40 W Maximum Voltages and Currents BVCBO Collector to Base Voltage 200 V BVCEO Collector to Emitter Voltage 60 V BVEB

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