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HSD1609 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HSD1609 datasheet PDF. This datasheet also covers the HSD1609_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low frequency high voltage amplifier.
  • Complementary pair with HSB1109 Absolute Maximum Ratings (TA=25°C) TO-126ML.
  • Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 1.25 W.
  • Maximum Voltages and Currents BVCBO Collector to Base Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HSD1609_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HSD1609
Manufacturer Hi-Sincerity Mocroelectronics
File Size 42.85 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HSD1609 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HSD1609 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6606 Issued Date : 1993.03.15 Revised Date : 2006.02.20 Page No. : 1/4 Features • Low frequency high voltage amplifier • Complementary pair with HSB1109 Absolute Maximum Ratings (TA=25°C) TO-126ML • Maximum Temperatures Storage Temperature ........................................................................................................................... -50 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ..............................................................................................................