HSD1609S - NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Download the HSD1609S datasheet PDF. This datasheet also covers the HSD1609S_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HSD1609S is designed for low frequency high voltage amplifier applications, complementary pair with HSB1109S.

Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature 150 °C Maximum Maximum Power Dissipation Total Power D

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HSD1609S npn epitaxial planar transistor by Hi-Sincerity Mocroelectronics - Datasheet Preview — Note: The manufacturer provides a single datasheet file (HSD1609S_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	HSD1609S
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	38.42 KB
Description	NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet	HSD1609S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6515 Issued Date : 1993.03.15 Revised Date : 2002.01.15 Page No. : 1/4 HSD1609S NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD1609S is designed for low frequency high voltage amplifier applications, complementary pair with HSB1109S. Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 °C Junction Temperature ...................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................