• Part: HSD1609S
  • Description: NPN EPITAXIAL PLANAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: Hi-Sincerity Mocroelectronics
  • Size: 38.42 KB
Download HSD1609S Datasheet PDF
Hi-Sincerity Mocroelectronics
HSD1609S
HSD1609S is NPN EPITAXIAL PLANAR TRANSISTOR manufactured by Hi-Sincerity Mocroelectronics.
- Part of the HSD1609S_Hi comparator family.
Description The HSD1609S is designed for low frequency high voltage amplifier applications, plementary pair with HSB1109S. Absolute Maximum Ratings TO-92 - Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature 150 °C Maximum - Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 900 m W - Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage 160 V VCEO Collector to Emitter Voltage...