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HSD313 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HSD313 datasheet PDF. This datasheet also covers the HSD313_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HSD313 is designed for use in general purpose amplifier and switching applications.

Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (

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Note: The manufacturer provides a single datasheet file (HSD313_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HSD313
Manufacturer Hi-Sincerity Mocroelectronics
File Size 51.86 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HSD313 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HSD313 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6728 Issued Date : 1993.04.12 Revised Date : 2004.11.19 Page No. : 1/5 Description The HSD313 is designed for use in general purpose amplifier and switching applications. Absolute Maximum Ratings (TA=25°C) TO-220 • Maximum Temperatures Storage Temperature ........................................................................................................................... -50 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ...............................................................................................