• Part: HSD879
  • Description: SILICON NPN EPITAXIAL TYPE TRANSISTOR
  • Category: Transistor
  • Manufacturer: Hi-Sincerity Mocroelectronics
  • Size: 45.78 KB
Download HSD879 Datasheet PDF
Hi-Sincerity Mocroelectronics
HSD879
HSD879 is SILICON NPN EPITAXIAL TYPE TRANSISTOR manufactured by Hi-Sincerity Mocroelectronics.
- Part of the HSD879_Hi comparator family.
Description For 1.5V and 3v electronic flash use. Features - Charger-up time is about 1 ms faster than of a germanium transistor - Small saturation voltage can bring less power dissipation and flashing times TO-92 Absolute Maximum Ratings - Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum - Maximum Power Dissipation Total Power Dissipation (TA=25°C) 750 m W - Maximum Voltages and Currents (TA=25°C) BVCBO Collector...