HSD879 - SILICON NPN EPITAXIAL TYPE TRANSISTOR

This page provides the datasheet information for the HSD879, a member of the HSD879_Hi SILICON NPN EPITAXIAL TYPE TRANSISTOR family.

Product Overview

Hi-Sincerity Mocroelectronics

Part number	HSD879
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	45.78 KB
Description	SILICON NPN EPITAXIAL TYPE TRANSISTOR
Datasheet	HSD879 Datasheet
Additional preview pages of the HSD879 datasheet.

For 1.5V and 3v electronic flash use.

Charger-up time is about 1 ms faster than of a germanium transistor.
Small saturation voltage can bring less power dissipation and flashing times TO-92 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 750 mW.
Maximum Voltages and Currents (TA=25°C) BVCBO Collector t.

Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Mar 26, 2005 |