• Part: HVD147
  • Description: Silicon Epitaxial Trench Pin Diode
  • Category: Diode
  • Manufacturer: Renesas
  • Size: 107.84 KB
Download HVD147 Datasheet PDF
Renesas
HVD147
Features - - - - Adopting the trench structure improves low capacitance.(C = 0.31 p F max) Low forward resistance. (rf = 1.5 Ω max) Low operation current. Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information Type No. HVD147 Laser Mark L1 Package Code SFP Pin Arrangement Cathode mark Mark 1 L1 2 1. Cathode 2. Anode Rev.2.00 Oct 20, 2004 page 1 of 4 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 30 100 150 125 - 55 to +125 Unit V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Forward voltage Capacitance Forward resistance ESD-Capability - 1 Symbol IR VF C rf - Min - - - - - 100 Typ - - - 2.5 - - Max 100 1.00 0.31 - 1.5 - Unit n A V p F Ω V Test Condition VR = 30 V IF = 10 m A VR = 1 V, f = 1 MHz IF = 2 m A, f = 100 MHz IF = 10 m A, f = 100 MHz C = 200 p F, R = 0 Ω, Both forward and reverse direction...