R2J20604NP Overview
Description
The R2J20604NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters.
Key Features
- Built-in power MOS FET suitable for applications with 12 V input and low output voltage
- Built-in driver circuit which matches the power MOS FET
- Built-in tri-state input function which can support a number of PWM controllers
- Capable of 3.3 V PWM signal
- VIN operating-voltage range: 16 V max
- High-frequency operation (above 1 MHz) possible
- Large average output current (Max. 40 A)
- Achieve low power dissipation (About 4.4 W at 1 MHz, 25 A)
- Controllable driver: Remote on/off
- Built-in Schottky diode for bootstrapping
