R2J20601NP Datasheet | Renesas

Driver - MOS FET Integrated Si P (Dr MOS) REJ03G0237-0700 Rev.7.00 Jun 30, 2008 Description The R2J20601NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap Schottky barrier diode (SBD), eliminating the need for an external SBD for this purpose. Integrating a driver and both high-side and low-side power MOS FETs, the new device is also pliant with the package standard “Driver - MOS FET integrated Si P (Dr MOS)” proposed by Intel Corporation. Features - Built-in power MOS FET suitable for applications with 12 V input and low output voltage - Built-in driver circuit which matches the power MOS FET - Built-in tri-state input function which can support a number of PWM controllers - VIN operating-voltage range: 16 V max - High-frequency operation (above 1 MHz) possible - Large average output current (35 A) - Achieve low power dissipation (About 5.6 W at 1 MHz, 25 A) - Controllable driver: Remote on/off - Built-in Schottky diode for bootstrapping - Low-side drive voltage can be independently set - Small package: QFN56 (8 mm × 8 mm × 0.8 mm) - Pb-free Outline VCIN BOOT GH VIN Reg5V Driver Tab High-side MOS Tab DISBL# PWM MOS FET...