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RJE0603JPE - Silicon P Channel MOS FET Series Power Switching

General Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

Key Features

  • High endurance capability against to the short circuit. Built-in the over temperature shut-down circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Outline.

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Datasheet Details

Part number RJE0603JPE
Manufacturer Renesas
File Size 105.06 KB
Description Silicon P Channel MOS FET Series Power Switching
Datasheet download datasheet RJE0603JPE Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Datasheet RJE0603JPE Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. REJ03G1907-0100 Rev.1.00 Apr 01, 2010 Features     High endurance capability against to the short circuit. Built-in the over temperature shut-down circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit.