RJE0605JPD - Silicon P Channel MOS FET Series Power Switching

Product Overview

Renesas Technology

Part number	RJE0605JPD
Manufacturer	Renesas Technology
File Size	107.28 KB
Description	Silicon P Channel MOS FET Series Power Switching
Datasheet	RJE0605JPD Datasheet
Additional preview pages of the RJE0605JPD datasheet.

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

Logic level operation (.
6 V Gate drive). Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Low on-resistance RDS(on): 58 m Typ, 75 m Max (VGS =.
10 V) Outline.

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Published: Nov 8, 2010 |