Datasheet Details
| Part number | RJE0605JPD |
|---|---|
| Manufacturer | Renesas |
| File Size | 107.28 KB |
| Description | Silicon P Channel MOS FET Series Power Switching |
| Datasheet |
 RJE0605JPD Datasheet
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General Description
This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area.
Key Features
- Logic level operation (.
- 6 V Gate drive). Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Low on-resistance RDS(on): 58 m Typ, 75 m Max (VGS =.
- 10 V) Outline.