Datasheet4U Logo Datasheet4U.com

RJE0607JSP Datasheet P-channel MOSFET

Manufacturer: Renesas

Overview: RJE0607JSP Silicon P Channel MOS FET Series Power Switching Preliminary Datasheet R07DS0123EJ0200 (Previous: REJ03G1876-0100) Rev.2.

General Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..

Key Features

  • High endurance capability against to the short circuit.
  • Built-in the over temperature shut-down circuit.
  • Latch type shut down operation (need 0 voltage recovery).
  • Built-in the current limitation circuit.
  • Low on-resistance RDS(on) : 140 mī— Typ, 260 mī— Max (VGS =.
  • 10 V).
  • High density mounting Outline.

More Datasheets from Renesas

Part Number Description
RJE0601JPE Silicon P Channel MOS FET Series Power Switching
RJE0603JPE Silicon P Channel MOS FET Series Power Switching
RJE0605JPD Silicon P Channel MOS FET Series Power Switching
RJE0609JPD P-Channel MOSFET
RJE0615JSP P-Channel MOSFET
RJE0616JSP P-Channel MOSFET

RJE0607JSP Distributor