RJE0609JPD
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. REJ03G1908-0100 Rev.1.00 Apr 01, 2010
Features
- -
- -
- - Logic level operation (- 6 V Gate drive). Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Low on-resistance 100 m Max (VGS =
- 10 V)
Outline
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) )
4 1. Gate 2. Drain 3. Source 4. Drain
Gate Resistor Temperature Sensing Circuit Latch Circuit Gate Shut-down Circuit
Current Limitation Circuit
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Drain to source voltage VDSS Gate...
