RJE0609JPD - P-Channel MOSFET

Product Overview

Renesas Technology

Part number	RJE0609JPD
Manufacturer	Renesas Technology
File Size	105.20 KB
Description	P-Channel MOSFET
Datasheet	RJE0609JPD Datasheet
Additional preview pages of the RJE0609JPD datasheet.

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

Logic level operation (.
6 V Gate drive). Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. Low on-resistance 100 m Max (VGS =.
10 V) Outline.

Other Datasheets by Renesas Technology

Published: Nov 8, 2010 |