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RJK0204DPA - Silicon N Channel Power MOS FET

General Description

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Key Features

  • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m typ. (at VGS = 10 V).
  • Pb-free.
  • Halogen-free.
  • Outline.

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Datasheet Details

Part number RJK0204DPA
Manufacturer Renesas
File Size 106.73 KB
Description Silicon N Channel Power MOS FET
Datasheet download datasheet RJK0204DPA Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary www.DataSheet4U.com Datasheet RJK0204DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1922-0210 Power Switching Rev.2.10 Apr 27, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m typ.