RJK0210DPA Description
Preliminary Datasheet RJK0210DPA Silicon N Channel Power MOS FET Power Switching.
RJK0210DPA Key Features
- Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on)
- Pb-free
- Halogen-free REJ03G1948-0021 Rev.0.21 Jul 02, 2010