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RJK0214DPA - Silicon N Channel Power MOS FET

Key Features

  • Low on-resistance.
  • Capable of 4.5 V gate drive.
  • High density mounting.
  • Pb-free.
  • Halogen-free Outline.

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Datasheet Details

Part number RJK0214DPA
Manufacturer Renesas
File Size 314.14 KB
Description Silicon N Channel Power MOS FET
Datasheet download datasheet RJK0214DPA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Datasheet RJK0214DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0206EJ0110 Rev.1.10 Sep 02, 2011 Applications DC-DC conversion for PC and Server. Features  Low on-resistance  Capable of 4.