RJK0216DPA - Silicon N Channel Power MOS FET

Datasheet Summary

Features

Low on-resistance.
Capable of 4.5 V gate drive.
High density mounting.
Pb-free.
Halogen-free Outline.

Renesas Technology

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Datasheet Details

Part number	RJK0216DPA
Manufacturer	Renesas Technology
File Size	313.84 KB
Description	Silicon N Channel Power MOS FET
Datasheet	RJK0216DPA Datasheet
Additional preview pages of the RJK0216DPA datasheet.

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Preliminary Datasheet RJK0216DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0208EJ0110 Rev.1.10 Sep 05, 2011 Applications DC-DC conversion for PC and Server. Features  Low on-resistance  Capable of 4.

Published: Aug 17, 2015 |