RJK0216DPA
RJK0216DPA is manufactured by Renesas.
Preliminary Datasheet
Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switching
R07DS0208EJ0110 Rev.1.10
Sep 05, 2011
Applications
DC-DC conversion for PC and Server.
Features
- Low on-resistance
- Capable of 4.5 V gate drive
- High density mounting
- Pb-free
- Halogen-free
Outline
RENESAS Package code: PWSN0008DD-A (Package name: WPAK-D(2))
5 678
1 G1
234 D1 D1 D1
8 G2
4 32 1
MOS1
9 S1/D2
S2 S2 S2 56 7
4321 (Bottom View)
MOS2 and
Schottky Barrier Diode
1, 8 Gate 2, 3, 4, 9 Drain 5, 6, 7, 9...
