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RJK0215DPA - N-Channel MOSFET

Key Features

  • Low on-resistance.
  • Capable of 4.5 V gate drive.
  • High density mounting.
  • Pb-free.
  • Halogen-free Outline.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Datasheet RJK0215DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0207EJ0110 Rev.1.10 Sep 05, 2011 Applications DC-DC conversion for PC and Server. Features  Low on-resistance  Capable of 4.