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RJK0329DPB - Silicon N Channel Power MOS FET Power Switching

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Renesas Technology

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RJK0329DPB Silicon N Channel Power MOS FET Power Switching by Renesas Technology - Datasheet Preview — Datasheet preview – RJK0329DPB

Datasheet Details

Part number	RJK0329DPB
Manufacturer	Renesas Technology
File Size	154.14 KB
Description	Silicon N Channel Power MOS FET Power Switching
Datasheet	RJK0329DPB Datasheet
Additional preview pages of the RJK0329DPB datasheet.

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Features

High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.8 mΩ typ. (at VGS = 10 V).
Pb-free.
Outline.

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Published: Feb 15, 2009 |