RJK0303DPB Datasheet | Renesas

.. Silicon N Channel Power MOS FET Power Switching REJ03G1341-0600 Rev.6.00 Apr 19, 2006 Features - - - - - High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.1 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1, 2, 3 4 5 Source Gate Drain S S S 1 2...