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RJK0305DPB-02 - Silicon N-Channel Power MOSFET

Key Features

  • High speed switching.
  • Capable of 4.5 V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance RDS(on) = 6.7 mΩ typ. (at VGS = 10 V).
  • Pb-free.
  • Halogen-free Outline.

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RJK0305DPB-02 30V, 30A, 8.0mΩmax Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 6.7 mΩ typ. (at VGS = 10 V) • Pb-free • Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 4 G 1 234 Preliminary Datasheet R07DS1245EJ0901 (Previous: REJ03G1353-0900) Rev.9.01 Jan 07, 2015 5 D SSS 123 1, 2, 3 Source 4 Gate 5 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1.