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RJK0358DPA - Silicon N Channel Power MOS FET Power Switching

Features

  • High speed switching Capable of 5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.6 mΩ typ. (at VGS = 10 V) Outline.

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www.DataSheet4U.com RJK0358DPA Silicon N Channel Power MOS FET Power Switching REJ03G1651-0400 Rev.4.00 Apr 10, 2008 Features • • • • • High speed switching Capable of 5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.6 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
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